PLASMA ETCHING APPARATUS

PLASMA ETCHING APPARATUS

PROBLEM TO BE SOLVED: To provide an electrodeless plasma etching apparatus which equalizes the radical density and improves the uniformity of etching.SOLUTION: An electrodeless plasma etching apparatus has: a decompression processing chamber 20; a first gas introduction mechanism 16; a dielectric wi...

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Bibliographische Detailangaben
Hauptverfasser: NEGISHI NOBUYUKI, KAMIBAYASHI MASAMI, MIYAKE MASATOSHI, YOKOGAWA KATANOBU, KOTO NAOYUKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an electrodeless plasma etching apparatus which equalizes the radical density and improves the uniformity of etching.SOLUTION: An electrodeless plasma etching apparatus has: a decompression processing chamber 20; a first gas introduction mechanism 16; a dielectric window 26; plasma generation means (13, 15); a sample table 18 on which a sample 21 is placed; and a first high frequency power source 29 connecting with the sample table 18. The plasma etching apparatus further includes: gas introduction mechanisms (36, 40) for supplying a second gas; and a second high frequency power source 2 for inputting high frequency power generating radicals around an outer periphery of the sample 21.