COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM AND METHOD FOR FORMING THE SAME, AND METHOD FOR FORMING PATTERN

PROBLEM TO BE SOLVED: To provide a composition for forming a resist underlayer film, which satisfies demands for the characteristics of a resist underlayer film relating to a refractive index and an attenuation coefficient, and which allows formation of a resist underlayer film having high heat resi...

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Bibliographische Detailangaben
Hauptverfasser: MOTONARI MASAYUKI, NAKAFUJI SHINYA, MURAKAMI AKIRA, TAKIMOTO YOSHIO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a composition for forming a resist underlayer film, which satisfies demands for the characteristics of a resist underlayer film relating to a refractive index and an attenuation coefficient, and which allows formation of a resist underlayer film having high heat resistance while maintaining high flexural resistance of a pattern formed in the resist underlayer film, and to provide a resist underlayer film, a method for forming the film, and a method for forming a pattern.SOLUTION: The composition for forming a resist underlayer film comprises [A] a polymer having a structural unit (I) expressed by formula (1). In formula (1), Arand Arrespectively independently represent a divalent group expressed by formula (2). In formula (2), Rand Rrespectively independently represent a divalent aromatic group; Rrepresents a single bond, -O-, -CO-, -SO- or -SO-; and (a) represents an integer of 0 to 3, wherein when (a) is 2 or more, a plurality of Rand a plurality of Rmay be the same or different respectively.