METHOD FOR PRODUCING HIGH RESISTIVITY SILICON CARBIDE

PROBLEM TO BE SOLVED: To provide a method for producing a recrystallized silicon carbide body having resistivity of not less than about 1E5 cm and nitrogen atoms of not greater than about 200 ppm.SOLUTION: The method includes steps of: forming a mixture by combining coarse silicon carbide particles and fine silicon carbide particles having an average particle size less than the average particle size of the coarse silicon carbide particles; forming the mixture to form a green article; and heating the green article to a sublimation temperature in an atmosphere comprising an inert gas and having a reduced pressure of not greater than about 25 Torr to form the recrystallized silicon carbide body.