SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device which can simultaneously form a high concentration n layer and a lifetime control region, and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises a semiconductor substrate including: an n-type drift layer; a p-type body layer provided on a surface side of the drift layer; and a high concentration n layer provided on a rear face side of the drift layer, containing hydrogen ion donor as a dopant and having an n-type impurity concentration higher than that of the drift layer. In a part of the high concentration n layer and the drift layer, a lifetime control region including a crystal defect as a lifetime killer is formed. In a thickness direction of the semiconductor substrate, a donor peak position at which a hydrogen ion donor concentration of the high concentration n layer is the highest coincides with or next to a defect peak position at which a crystal defect density of the lifetime control region is the highest. A crystal defect density of the lifetime control region at the defect peak position is equal to or higher than 1×10atoms/cm.