CRYSTAL OSCILLATOR
PROBLEM TO BE SOLVED: To form an SiOfilm on one main surface or both main surfaces of a crystal piece through vapor deposition or sputtering thereby easily obtaining a crystal oscillator, in which a thick part having a shape similar to a mesa shape or a bevel shape is formed, at low cost.SOLUTION: A...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To form an SiOfilm on one main surface or both main surfaces of a crystal piece through vapor deposition or sputtering thereby easily obtaining a crystal oscillator, in which a thick part having a shape similar to a mesa shape or a bevel shape is formed, at low cost.SOLUTION: A crystal oscillator is composed of: a crystal piece 10; a thick part M which is formed by an SiOlayer 11 formed on one of or both of main surfaces of the crystal piece 10; and an electrode 12 formed on any one surface of the thick part M or both upper and lower surfaces of the thick part M. |
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