PATTERN GENERATING METHOD, PATTERN FORMATION METHOD, AND PATTERN GENERATION PROGRAM

PROBLEM TO BE SOLVED: To reduce flare in EUV exposure.SOLUTION: A pattern generation method includes the steps of: evaluating a flare amount generated in EUV exposure through a mask; adding a dummy mask pattern to the mask on the basis of the evaluation result of the flare amount; and conducting a f...

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Bibliographische Detailangaben
Hauptverfasser:	MASHITA HIROMITSU, UNO TAIGA, MIYAIRI MASAHIRO, YUDA RYOTA, KOTANI TOSHIYA
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To reduce flare in EUV exposure.SOLUTION: A pattern generation method includes the steps of: evaluating a flare amount generated in EUV exposure through a mask; adding a dummy mask pattern to the mask on the basis of the evaluation result of the flare amount; and conducting a flare correction and a proximity effect correction on a layout pattern exposed by EUV through a mask having the added dummy mask pattern.