GAS CLUSTER ION BEAM ETCHING PROCESS FOR ACHIEVING TARGET ETCH PROCESS CHARACTERISTICS FOR COMPOSITE MATERIALS

PROBLEM TO BE SOLVED: To provide a method and apparatus for performing a gas cluster ion beam (GCIB) etch process for various materials.SOLUTION: The method comprises: maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a first material, a second material and a surface exposing the first material and/or the second material; selecting one or more target etch process characteristics; forming a gas cluster ion beam (GCIB) from a pressurized gas containing at least one etching gas; setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve the one or more target etch process characteristics; accelerating the GCIB through the reduced-pressure environment; and applying the GCIB onto at least a portion of the surface of the substrate to etch at least a portion of the first material and the second material.