RESISTANCE CHANGE TYPE MEMORY ELEMENT IN MIS STRUCTURE

PROBLEM TO BE SOLVED: To provide a ReRAM element that stably operates on an off-state current of 10 μA or less by changing one side of an electrode from metal to p-type Si semiconductor for conversion into MIS type, in a conventional MIM type ReRAM element that cannot avoid unstable off operation be...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NIKO KIYOSUKE, HARADA YOSHIYUKI, KATO SEIICHI, KIDO YOSHIO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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