RESISTANCE CHANGE TYPE MEMORY ELEMENT IN MIS STRUCTURE

PROBLEM TO BE SOLVED: To provide a ReRAM element that stably operates on an off-state current of 10 μA or less by changing one side of an electrode from metal to p-type Si semiconductor for conversion into MIS type, in a conventional MIM type ReRAM element that cannot avoid unstable off operation because of large off-state currents.SOLUTION: With such a structure that off operations of a ReRAM element are executed using an off structure by conversion into hot electrons, activation energy of electrons is required, which causes enlargement of off-state currents. By reviewing the principle of such an off structure to change the structure into an off mechanism by depletion of a p-n junction section using voltages requiring no activation energy, a ReRAM element of extremely low power consumption can be provided.