RESISTANCE CHANGE TYPE MEMORY ELEMENT IN MIS STRUCTURE

RESISTANCE CHANGE TYPE MEMORY ELEMENT IN MIS STRUCTURE

PROBLEM TO BE SOLVED: To provide a ReRAM element that stably operates on an off-state current of 10 μA or less by changing one side of an electrode from metal to p-type Si semiconductor for conversion into MIS type, in a conventional MIM type ReRAM element that cannot avoid unstable off operation be...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NIKO KIYOSUKE, HARADA YOSHIYUKI, KATO SEIICHI, KIDO YOSHIO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator NIKO KIYOSUKE
HARADA YOSHIYUKI
KATO SEIICHI
KIDO YOSHIO
description PROBLEM TO BE SOLVED: To provide a ReRAM element that stably operates on an off-state current of 10 μA or less by changing one side of an electrode from metal to p-type Si semiconductor for conversion into MIS type, in a conventional MIM type ReRAM element that cannot avoid unstable off operation because of large off-state currents.SOLUTION: With such a structure that off operations of a ReRAM element are executed using an off structure by conversion into hot electrons, activation energy of electrons is required, which causes enlargement of off-state currents. By reviewing the principle of such an off structure to change the structure into an off mechanism by depletion of a p-n junction section using voltages requiring no activation energy, a ReRAM element of extremely low power consumption can be provided.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2013055209A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2013055209A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2013055209A3</originalsourceid><addsrcrecordid>eNrjZDALcg32DA5x9HN2VXD2cPRzd1UIiQxwVfB19fUPilRw9XH1dfULUfD0U_D1DFYIDgkKdQ4JDXLlYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBobGBqamRgaWjsZEKQIAbwcodA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>RESISTANCE CHANGE TYPE MEMORY ELEMENT IN MIS STRUCTURE</title><source>esp@cenet</source><creator>NIKO KIYOSUKE ; HARADA YOSHIYUKI ; KATO SEIICHI ; KIDO YOSHIO</creator><creatorcontrib>NIKO KIYOSUKE ; HARADA YOSHIYUKI ; KATO SEIICHI ; KIDO YOSHIO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a ReRAM element that stably operates on an off-state current of 10 μA or less by changing one side of an electrode from metal to p-type Si semiconductor for conversion into MIS type, in a conventional MIM type ReRAM element that cannot avoid unstable off operation because of large off-state currents.SOLUTION: With such a structure that off operations of a ReRAM element are executed using an off structure by conversion into hot electrons, activation energy of electrons is required, which causes enlargement of off-state currents. By reviewing the principle of such an off structure to change the structure into an off mechanism by depletion of a p-n junction section using voltages requiring no activation energy, a ReRAM element of extremely low power consumption can be provided.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130321&amp;DB=EPODOC&amp;CC=JP&amp;NR=2013055209A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130321&amp;DB=EPODOC&amp;CC=JP&amp;NR=2013055209A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NIKO KIYOSUKE</creatorcontrib><creatorcontrib>HARADA YOSHIYUKI</creatorcontrib><creatorcontrib>KATO SEIICHI</creatorcontrib><creatorcontrib>KIDO YOSHIO</creatorcontrib><title>RESISTANCE CHANGE TYPE MEMORY ELEMENT IN MIS STRUCTURE</title><description>PROBLEM TO BE SOLVED: To provide a ReRAM element that stably operates on an off-state current of 10 μA or less by changing one side of an electrode from metal to p-type Si semiconductor for conversion into MIS type, in a conventional MIM type ReRAM element that cannot avoid unstable off operation because of large off-state currents.SOLUTION: With such a structure that off operations of a ReRAM element are executed using an off structure by conversion into hot electrons, activation energy of electrons is required, which causes enlargement of off-state currents. By reviewing the principle of such an off structure to change the structure into an off mechanism by depletion of a p-n junction section using voltages requiring no activation energy, a ReRAM element of extremely low power consumption can be provided.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDALcg32DA5x9HN2VXD2cPRzd1UIiQxwVfB19fUPilRw9XH1dfULUfD0U_D1DFYIDgkKdQ4JDXLlYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBobGBqamRgaWjsZEKQIAbwcodA</recordid><startdate>20130321</startdate><enddate>20130321</enddate><creator>NIKO KIYOSUKE</creator><creator>HARADA YOSHIYUKI</creator><creator>KATO SEIICHI</creator><creator>KIDO YOSHIO</creator><scope>EVB</scope></search><sort><creationdate>20130321</creationdate><title>RESISTANCE CHANGE TYPE MEMORY ELEMENT IN MIS STRUCTURE</title><author>NIKO KIYOSUKE ; HARADA YOSHIYUKI ; KATO SEIICHI ; KIDO YOSHIO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2013055209A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NIKO KIYOSUKE</creatorcontrib><creatorcontrib>HARADA YOSHIYUKI</creatorcontrib><creatorcontrib>KATO SEIICHI</creatorcontrib><creatorcontrib>KIDO YOSHIO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NIKO KIYOSUKE</au><au>HARADA YOSHIYUKI</au><au>KATO SEIICHI</au><au>KIDO YOSHIO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RESISTANCE CHANGE TYPE MEMORY ELEMENT IN MIS STRUCTURE</title><date>2013-03-21</date><risdate>2013</risdate><abstract>PROBLEM TO BE SOLVED: To provide a ReRAM element that stably operates on an off-state current of 10 μA or less by changing one side of an electrode from metal to p-type Si semiconductor for conversion into MIS type, in a conventional MIM type ReRAM element that cannot avoid unstable off operation because of large off-state currents.SOLUTION: With such a structure that off operations of a ReRAM element are executed using an off structure by conversion into hot electrons, activation energy of electrons is required, which causes enlargement of off-state currents. By reviewing the principle of such an off structure to change the structure into an off mechanism by depletion of a p-n junction section using voltages requiring no activation energy, a ReRAM element of extremely low power consumption can be provided.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2013055209A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title RESISTANCE CHANGE TYPE MEMORY ELEMENT IN MIS STRUCTURE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T00%3A32%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NIKO%20KIYOSUKE&rft.date=2013-03-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2013055209A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true