NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device with improved controllability of memory cells and to provide a method of manufacturing the same.SOLUTION: A nonvolatile semiconductor memory device includes a structure, a plurality of semiconductor layers, a memory film, a connection member, and a conductive member. The structure is provided on a memory region of a substrate having the memory region and a non-memory region. The structure is stacked along a first axis perpendicular to a primary surface of the substrate and includes a plurality of electrode films. The semiconductor layers penetrate the structure along the first axis. The memory film is provided between the plurality of electrode films and the semiconductor layers. The connection member is provided between the substrate and the semiconductor layers. The connection member is connected to each end of the two adjacent semiconductor layers. The conductive member is provided so as to extend from the memory region to the non-memory region between the substrate and the connection member. The conductive member has a recess provided on the non-memory region. In the recess, a first silicide portion is provided.