MEMS SENSOR

PROBLEM TO BE SOLVED: To provide an MEMS sensor capable of especially improving bonding strength of a bonding part having Al-Ge eutectic bonding, in comparison with a conventional one.SOLUTION: The MEMS sensor includes: a first base material 21; a second base material 22; and a bonding part 50 posit...

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Bibliographische Detailangaben
Hauptverfasser:	KAIRA CHIAKI, KOBAYASHI TOSHIHIRO, UTSU YOSHITAKA, TAKAHASHI TORU, MIYATAKE TORU, KIKUIRI KATSUYA, YAZAWA HISAYUKI, IKEDA KENICHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT MEASURING MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS SEMICONDUCTOR DEVICES TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an MEMS sensor capable of especially improving bonding strength of a bonding part having Al-Ge eutectic bonding, in comparison with a conventional one.SOLUTION: The MEMS sensor includes: a first base material 21; a second base material 22; and a bonding part 50 positioning between the first base material 21 and the second base material 22 and bonding a first connecting metal layer 54 formed on the first base material 21 side and a second connecting metal layer 55 formed on the second base material 22 side to each other by eutectic bonding. The bonding part 50 includes: a Ta layer 53; the first connecting metal layer 54 formed of Al or an Al alloy; and the second metal connecting layer 55 formed of Ge, in this order from the first base material 21 side to the second base material 22 side. Film thickness t1 of the Ta layer 53 is set within a range at 200-1,500 .