METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR LASER ELEMENT

METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR LASER ELEMENT

PROBLEM TO BE SOLVED: To reduce variation in wavelength in the vicinity of a selective growth mask by letting a modulator layer regrow in a butt joint regrowth step.SOLUTION: By setting growth pressure conditions to 50 Torr or less when a modulator layer is regrown in a butt joint regrowth step, var...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KAMITOKU MASAKI, FUJIWARA NAOKI, KAWAGUCHI NOBUHIRO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To reduce variation in wavelength in the vicinity of a selective growth mask by letting a modulator layer regrow in a butt joint regrowth step.SOLUTION: By setting growth pressure conditions to 50 Torr or less when a modulator layer is regrown in a butt joint regrowth step, variation in composition and variation in film thickness can be suppressed, and thereby variation in wavelength is reduced.