SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To inhibit defects such as a dimple occurring due to peeling of an insulation film swell part remaining at a boundary between an insulation film on a capacitor and an insulation film on a region where a capacitor is not formed when both insulation films are planarized after a part of the insulation film on the capacitor is removed in planarization of both insulation films.SOLUTION: Assuming that a shortest distance of an insulation film swell part remaining at a boundary from a rise point of the swell part in a horizontal direction is Lr, and an etching amount is Hd, an aspect ratio Hd/Lr is set at 0.6 and under, preferably 0.25 and under. An etching opening end on the capacitor is formed in a shape of a saw blade. Or a lateral face of the opening end is formed in a slanted shape. Or a slit is formed on the opening end.