NON-ACTIVATED GUARD RING FOR SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device, and particularly, the semiconductor device which incorporates a metal-semiconductor rectifying junction, such as a Schottky diode.SOLUTION: A guard ring is formed in a semiconductor region that is a part of Schottky junction or a Schottky diode. The guard ring is formed by ion implantation into a semiconductor contact layer, without completely annealing the semiconductor contact layer, for forming a high resistance region. The guard ring can be located at an edge part of the layer or, alternatively at a certain distance away from the edge part of the layer. A Schottky metal contact is formed on the layer, and an edge part of the Schottky contact is disposed on the guard ring.