SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a technology for improving characteristics of a semiconductor device (DMOSFET).SOLUTION: A semiconductor device comprises: an n type source layer (102) arranged above an SiC substrate (106) on a first surface side; a p body layer (103) embracing the source layer and having channel regions; an n type ndrift layer (107) contacting the p body layer (103); gate electrodes (116) each arranged above the channel region via a gate insulation film; and a first player (109) arranged in the p body layer (103) and extending below the nsource layer (102), the first player (109) being embedded semiconductor regions having an impurity concentration higher than that of the p body layer (103). As described above, by forming the first player (109) in the middle of the p body layer (103), diffusion resistance of the p body layer (103) can be reduced. As a result, the permeability of turning on of a parasitic bipolar transistor can be decreased.