LASER PRINTING METHOD FOR NTD SEMICONDUCTOR SUBSTRATE

PROBLEM TO BE SOLVED: To provide a laser printing method for a semiconductor substrate, capable of displaying a character pattern and a discrimination pattern with an uneven shaped printing dot engraving having an excellent depth for visibility even for an NTD silicon wafer by using a YVO4 laser bea...

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Bibliographische Detailangaben
Hauptverfasser:	SAKAGUCHI HIROSHI, TAKEDA HISAO, YAO NORIAKI, WARATANI SHUZO, MAIKUMA KEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a laser printing method for a semiconductor substrate, capable of displaying a character pattern and a discrimination pattern with an uneven shaped printing dot engraving having an excellent depth for visibility even for an NTD silicon wafer by using a YVO4 laser beam.SOLUTION: The laser printing method for a semiconductor substrate comprises processes of: applying a heat treatment at 200°C or higher for 30 minutes or longer to a semiconductor substrate 1 having a damage in an atomic arrangement of a crystal lattice caused by neutron ray irradiation; and engraving a required discrimination pattern by irradiating a marginal part of a surface of the semiconductor substrate 1 with a YVO4 laser.