METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To prevent thick film growth inhibition of a crystal caused by generation of a polycrystal, in crystal growth having a nonpolar surface and a semipolar surface as main surfaces.SOLUTION: In this method for producing a group III nitride semiconductor single crystal for growing a...

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Bibliographische Detailangaben
Hauptverfasser:	KUBO SHUICHI, KIYOMI KAZUMASA, ENATSU YUKI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent thick film growth inhibition of a crystal caused by generation of a polycrystal, in crystal growth having a nonpolar surface and a semipolar surface as main surfaces.SOLUTION: In this method for producing a group III nitride semiconductor single crystal for growing a group III nitride semiconductor crystal on a base substrate comprising a group III nitride crystal and having a nonpolar surface or a semipolar surface as a main surface, when defining a surface tilted by ±90° from the main surface to the c-axis direction as K-surface, the base substrate having a side surface having a specifically-angled surface to the K-surface is used to thereby solve the problem of the generation of a polycrystal.