VAPOR GROWTH DEVICE

PROBLEM TO BE SOLVED: To provide a vapor growth device capable of suppressing deformation caused by the gravity of a susceptor or heating even if the vapor growth device is a face-down type vapor growth device that holds a plurality of substrate holders by the susceptor or a face-down type vapor gro...

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Bibliographische Detailangaben
Hauptverfasser:	NAKAOKA KENKICHI, KODAMA YOSHIFUMI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a vapor growth device capable of suppressing deformation caused by the gravity of a susceptor or heating even if the vapor growth device is a face-down type vapor growth device that holds a plurality of substrate holders by the susceptor or a face-down type vapor growth device of tertiary nitride semiconductor which requires vapor growth temperature exceeding 1000°C.SOLUTION: The vapor growth device includes a substrate holder 2 which holds a substrate 1, and a susceptor 3 which rotatably holds the substrate holder. In the vapor growth device, the susceptor being deflected in such a manner as a central portion protrudes upward is arranged with the central portion being pressurized from above by way of a rotation drive shaft 10 for transmitting a rotational drive force to the substrate holder.