SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PROBLEM TO BE SOLVED: To solve the problem that an MIM capacitor and the like are frequently used since direct interception is required between active elements such as a transistor and between the active element and an external terminal in a high frequency circuit and that the MIM capacitor connecte...

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Bibliographische Detailangaben
Hauptverfasser: KUROKAWA ATSUSHI, OSAKABE SHINYA
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To solve the problem that an MIM capacitor and the like are frequently used since direct interception is required between active elements such as a transistor and between the active element and an external terminal in a high frequency circuit and that the MIM capacitor connected to the external terminal is easily affected by external static electricity and tends to cause the problem of electrostatic discharge and the like.SOLUTION: In a semiconductor integrated circuit device formed on a semi-insulating compound semiconductor substrate, a first electrode of the MIM capacitor which is electrically connected to an external pad is electrically connected to the semi-insulating compound semiconductor substrate, and a second electrode of the MIM capacitor is electrically connected to the semi-insulating compound semiconductor substrate.