ALUMINUM NITRIDE SINTERED COMPACT AND WAFER HOLDER FOR SEMICONDUCTOR MANUFACTURING DEVICE OR INSPECTION DEVICE USING THE SAME

PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact that can maintain volume resistivity to a high value at normal temperature but also at high temperature and to provide a wafer holder for a semiconductor manufacturing device or an inspection device at least partially using the al...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	NAKANISHI SHUSUKE, NISHI TERUHITO, NAKADA HIROHIKO, NATSUHARA MASUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY LIME, MAGNESIA METALLURGY REFRACTORIES SEMICONDUCTOR DEVICES SLAG TREATMENT OF NATURAL STONE
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact that can maintain volume resistivity to a high value at normal temperature but also at high temperature and to provide a wafer holder for a semiconductor manufacturing device or an inspection device at least partially using the aluminum nitride sintered compact.SOLUTION: There is provided the aluminum nitride sintered compact composed of aluminum nitride particles including a carbon nanotube therein, wherein the volume resistivity at normal temperature and at a temperature of 500°C is ≥1.0 x 10 cm and ≥1.0 x 10 cm.