PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD

PROBLEM TO BE SOLVED: To provide a plasma processing device and a plasma processing method which improve processing efficiency by suppressing contamination to a sample.SOLUTION: A plasma processing device comprises a sample stand provided within a processing chamber arranged in a vacuum vessel and c...

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Hauptverfasser:	YAKUSHIJI MAMORU, OMOTO YUTAKA, YOSHIOKA TAKESHI, TAKATSUMA YUTAKA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma processing device and a plasma processing method which improve processing efficiency by suppressing contamination to a sample.SOLUTION: A plasma processing device comprises a sample stand provided within a processing chamber arranged in a vacuum vessel and capable of mounting a substrate-shape sample to be processed over the processing chamber, and continuously processes the multiple samples by using plasma generated in the processing chamber. Temperature of the sample stand is controlled to predetermined temperature higher than the temperature of the sample processed during processing time of the sample.