IMAGE SENSOR STRUCTURE, MANUFACTURING METHOD OF IMAGE SENSOR AND IMAGE SENSOR

IMAGE SENSOR STRUCTURE, MANUFACTURING METHOD OF IMAGE SENSOR AND IMAGE SENSOR

PROBLEM TO BE SOLVED: To reduce variation in the thickness of a color filter in an image sensor.SOLUTION: The image sensor structure comprises: a plurality of image sensors formed in an array on a silicon substrate 51; and scribe lines between adjoining image sensors being cut when the plurality of...

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1. Verfasser: TOKITA NAOYUKI
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description PROBLEM TO BE SOLVED: To reduce variation in the thickness of a color filter in an image sensor.SOLUTION: The image sensor structure comprises: a plurality of image sensors formed in an array on a silicon substrate 51; and scribe lines between adjoining image sensors being cut when the plurality of image sensors are separated by dicing. Each of the plurality of image sensors includes a plurality of photoelectric conversion elements configured by a diffusion layer 52 formed on the silicon substrate 51, and guard wiring 81 formed of a conductor along the circumference of each image sensor to surround the plurality of photoelectric conversion elements. Dummy wiring 82 is formed in the same layer by the same process as that of the guard wiring 81 in the scribe line part 53.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2013004565A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2013004565A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2013004565A3</originalsourceid><addsrcrecordid>eNrjZPD19HV0d1UIdvUL9g9SCA4JCnUOCQ1y1VHwdfQLdXMEcTz93BV8XUM8_F0U_N0UUNQ7-rmgCPAwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUknivACMDQ2MDAxNTM1NHY6IUAQBBZS6N</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>IMAGE SENSOR STRUCTURE, MANUFACTURING METHOD OF IMAGE SENSOR AND IMAGE SENSOR</title><source>esp@cenet</source><creator>TOKITA NAOYUKI</creator><creatorcontrib>TOKITA NAOYUKI</creatorcontrib><description>PROBLEM TO BE SOLVED: To reduce variation in the thickness of a color filter in an image sensor.SOLUTION: The image sensor structure comprises: a plurality of image sensors formed in an array on a silicon substrate 51; and scribe lines between adjoining image sensors being cut when the plurality of image sensors are separated by dicing. Each of the plurality of image sensors includes a plurality of photoelectric conversion elements configured by a diffusion layer 52 formed on the silicon substrate 51, and guard wiring 81 formed of a conductor along the circumference of each image sensor to surround the plurality of photoelectric conversion elements. Dummy wiring 82 is formed in the same layer by the same process as that of the guard wiring 81 in the scribe line part 53.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130107&amp;DB=EPODOC&amp;CC=JP&amp;NR=2013004565A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130107&amp;DB=EPODOC&amp;CC=JP&amp;NR=2013004565A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TOKITA NAOYUKI</creatorcontrib><title>IMAGE SENSOR STRUCTURE, MANUFACTURING METHOD OF IMAGE SENSOR AND IMAGE SENSOR</title><description>PROBLEM TO BE SOLVED: To reduce variation in the thickness of a color filter in an image sensor.SOLUTION: The image sensor structure comprises: a plurality of image sensors formed in an array on a silicon substrate 51; and scribe lines between adjoining image sensors being cut when the plurality of image sensors are separated by dicing. Each of the plurality of image sensors includes a plurality of photoelectric conversion elements configured by a diffusion layer 52 formed on the silicon substrate 51, and guard wiring 81 formed of a conductor along the circumference of each image sensor to surround the plurality of photoelectric conversion elements. Dummy wiring 82 is formed in the same layer by the same process as that of the guard wiring 81 in the scribe line part 53.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPD19HV0d1UIdvUL9g9SCA4JCnUOCQ1y1VHwdfQLdXMEcTz93BV8XUM8_F0U_N0UUNQ7-rmgCPAwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUknivACMDQ2MDAxNTM1NHY6IUAQBBZS6N</recordid><startdate>20130107</startdate><enddate>20130107</enddate><creator>TOKITA NAOYUKI</creator><scope>EVB</scope></search><sort><creationdate>20130107</creationdate><title>IMAGE SENSOR STRUCTURE, MANUFACTURING METHOD OF IMAGE SENSOR AND IMAGE SENSOR</title><author>TOKITA NAOYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2013004565A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TOKITA NAOYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TOKITA NAOYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>IMAGE SENSOR STRUCTURE, MANUFACTURING METHOD OF IMAGE SENSOR AND IMAGE SENSOR</title><date>2013-01-07</date><risdate>2013</risdate><abstract>PROBLEM TO BE SOLVED: To reduce variation in the thickness of a color filter in an image sensor.SOLUTION: The image sensor structure comprises: a plurality of image sensors formed in an array on a silicon substrate 51; and scribe lines between adjoining image sensors being cut when the plurality of image sensors are separated by dicing. Each of the plurality of image sensors includes a plurality of photoelectric conversion elements configured by a diffusion layer 52 formed on the silicon substrate 51, and guard wiring 81 formed of a conductor along the circumference of each image sensor to surround the plurality of photoelectric conversion elements. Dummy wiring 82 is formed in the same layer by the same process as that of the guard wiring 81 in the scribe line part 53.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title IMAGE SENSOR STRUCTURE, MANUFACTURING METHOD OF IMAGE SENSOR AND IMAGE SENSOR
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T09%3A12%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TOKITA%20NAOYUKI&rft.date=2013-01-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2013004565A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true