IMAGE SENSOR STRUCTURE, MANUFACTURING METHOD OF IMAGE SENSOR AND IMAGE SENSOR

PROBLEM TO BE SOLVED: To reduce variation in the thickness of a color filter in an image sensor.SOLUTION: The image sensor structure comprises: a plurality of image sensors formed in an array on a silicon substrate 51; and scribe lines between adjoining image sensors being cut when the plurality of...

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Bibliographische Detailangaben
1. Verfasser: TOKITA NAOYUKI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To reduce variation in the thickness of a color filter in an image sensor.SOLUTION: The image sensor structure comprises: a plurality of image sensors formed in an array on a silicon substrate 51; and scribe lines between adjoining image sensors being cut when the plurality of image sensors are separated by dicing. Each of the plurality of image sensors includes a plurality of photoelectric conversion elements configured by a diffusion layer 52 formed on the silicon substrate 51, and guard wiring 81 formed of a conductor along the circumference of each image sensor to surround the plurality of photoelectric conversion elements. Dummy wiring 82 is formed in the same layer by the same process as that of the guard wiring 81 in the scribe line part 53.