In2O3-ZnO-BASED SPUTTERING TARGET AND OXIDE CONDUCTIVE FILM

PROBLEM TO BE SOLVED: To provide a sputtering target capable of forming an InO-ZnO-based oxide conductive film having a lower resistance value than in the prior art.SOLUTION: The sputtering target includes an oxide containing an indium element (In), a zinc element (Zn) and at least one element (A) s...

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Bibliographische Detailangaben
Hauptverfasser: MATSUBARA MASAHITO, GOTO KENJI
Format: Patent
Sprache:eng
Schlagworte:
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