In2O3-ZnO-BASED SPUTTERING TARGET AND OXIDE CONDUCTIVE FILM

PROBLEM TO BE SOLVED: To provide a sputtering target capable of forming an InO-ZnO-based oxide conductive film having a lower resistance value than in the prior art.SOLUTION: The sputtering target includes an oxide containing an indium element (In), a zinc element (Zn) and at least one element (A) s...

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Bibliographische Detailangaben
Hauptverfasser:	MATSUBARA MASAHITO, GOTO KENJI
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CABLES CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS LIME, MAGNESIA METALLURGY REFRACTORIES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a sputtering target capable of forming an InO-ZnO-based oxide conductive film having a lower resistance value than in the prior art.SOLUTION: The sputtering target includes an oxide containing an indium element (In), a zinc element (Zn) and at least one element (A) selected from the group A, a composition (atomic ratio) of the metal elements of In, Zn and A being represented by InZnA, in which x and y satisfy the following formula (1): 0.68≤x≤0.95 and formula (2): 0.0001≤y≤0.0045. The group A comprises Al, Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, Ga, B, Si, Ge, and lanthanoid.