SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To reduce current consumption in a sense amplifier circuit than that in a conventional one.SOLUTION: In the semiconductor device, a sense amplifier circuit 40 comprises: first and second preamplifier sections 110 and 120 which are connected to a memory cell MC0 and a reference...
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| creator | KAWAGOE TOMOYA MURAI YASUMITSU |
| description | PROBLEM TO BE SOLVED: To reduce current consumption in a sense amplifier circuit than that in a conventional one.SOLUTION: In the semiconductor device, a sense amplifier circuit 40 comprises: first and second preamplifier sections 110 and 120 which are connected to a memory cell MC0 and a reference cell MCR0 that have been selected when data are read out; and a main amplifier section 100 for amplifying a difference voltage between an output voltage of the first preamplifier section and an output voltage of the second preamplifier section. Each of the first and second preamplifier sections comprises: output nodes N12 and N14 for outputting an output voltage to the main amplifier section; a plurality of load elements 111, 112, 121 and 122 which are serially connected between the output node and a power node VDD a first main electrode connected to the output node, a second main electrode connected to the selected memory cell or reference cell; and transistors 113 and 123 having a control electrode. The control electrode of the transistor is connected to connection nodes N11 and N13 of the plurality of the load elements. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2012256388A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2012256388A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2012256388A3</originalsourceid><addsrcrecordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhkZGpmbGFhaOxkQpAgC-Ox8o</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>KAWAGOE TOMOYA ; MURAI YASUMITSU</creator><creatorcontrib>KAWAGOE TOMOYA ; MURAI YASUMITSU</creatorcontrib><description>PROBLEM TO BE SOLVED: To reduce current consumption in a sense amplifier circuit than that in a conventional one.SOLUTION: In the semiconductor device, a sense amplifier circuit 40 comprises: first and second preamplifier sections 110 and 120 which are connected to a memory cell MC0 and a reference cell MCR0 that have been selected when data are read out; and a main amplifier section 100 for amplifying a difference voltage between an output voltage of the first preamplifier section and an output voltage of the second preamplifier section. Each of the first and second preamplifier sections comprises: output nodes N12 and N14 for outputting an output voltage to the main amplifier section; a plurality of load elements 111, 112, 121 and 122 which are serially connected between the output node and a power node VDD a first main electrode connected to the output node, a second main electrode connected to the selected memory cell or reference cell; and transistors 113 and 123 having a control electrode. The control electrode of the transistor is connected to connection nodes N11 and N13 of the plurality of the load elements.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121227&DB=EPODOC&CC=JP&NR=2012256388A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121227&DB=EPODOC&CC=JP&NR=2012256388A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAWAGOE TOMOYA</creatorcontrib><creatorcontrib>MURAI YASUMITSU</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To reduce current consumption in a sense amplifier circuit than that in a conventional one.SOLUTION: In the semiconductor device, a sense amplifier circuit 40 comprises: first and second preamplifier sections 110 and 120 which are connected to a memory cell MC0 and a reference cell MCR0 that have been selected when data are read out; and a main amplifier section 100 for amplifying a difference voltage between an output voltage of the first preamplifier section and an output voltage of the second preamplifier section. Each of the first and second preamplifier sections comprises: output nodes N12 and N14 for outputting an output voltage to the main amplifier section; a plurality of load elements 111, 112, 121 and 122 which are serially connected between the output node and a power node VDD a first main electrode connected to the output node, a second main electrode connected to the selected memory cell or reference cell; and transistors 113 and 123 having a control electrode. The control electrode of the transistor is connected to connection nodes N11 and N13 of the plurality of the load elements.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhkZGpmbGFhaOxkQpAgC-Ox8o</recordid><startdate>20121227</startdate><enddate>20121227</enddate><creator>KAWAGOE TOMOYA</creator><creator>MURAI YASUMITSU</creator><scope>EVB</scope></search><sort><creationdate>20121227</creationdate><title>SEMICONDUCTOR DEVICE</title><author>KAWAGOE TOMOYA ; MURAI YASUMITSU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2012256388A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>KAWAGOE TOMOYA</creatorcontrib><creatorcontrib>MURAI YASUMITSU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAWAGOE TOMOYA</au><au>MURAI YASUMITSU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>2012-12-27</date><risdate>2012</risdate><abstract>PROBLEM TO BE SOLVED: To reduce current consumption in a sense amplifier circuit than that in a conventional one.SOLUTION: In the semiconductor device, a sense amplifier circuit 40 comprises: first and second preamplifier sections 110 and 120 which are connected to a memory cell MC0 and a reference cell MCR0 that have been selected when data are read out; and a main amplifier section 100 for amplifying a difference voltage between an output voltage of the first preamplifier section and an output voltage of the second preamplifier section. Each of the first and second preamplifier sections comprises: output nodes N12 and N14 for outputting an output voltage to the main amplifier section; a plurality of load elements 111, 112, 121 and 122 which are serially connected between the output node and a power node VDD a first main electrode connected to the output node, a second main electrode connected to the selected memory cell or reference cell; and transistors 113 and 123 having a control electrode. The control electrode of the transistor is connected to connection nodes N11 and N13 of the plurality of the load elements.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
| title | SEMICONDUCTOR DEVICE |
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