SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To reduce current consumption in a sense amplifier circuit than that in a conventional one.SOLUTION: In the semiconductor device, a sense amplifier circuit 40 comprises: first and second preamplifier sections 110 and 120 which are connected to a memory cell MC0 and a reference...

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Bibliographische Detailangaben
Hauptverfasser: KAWAGOE TOMOYA, MURAI YASUMITSU
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To reduce current consumption in a sense amplifier circuit than that in a conventional one.SOLUTION: In the semiconductor device, a sense amplifier circuit 40 comprises: first and second preamplifier sections 110 and 120 which are connected to a memory cell MC0 and a reference cell MCR0 that have been selected when data are read out; and a main amplifier section 100 for amplifying a difference voltage between an output voltage of the first preamplifier section and an output voltage of the second preamplifier section. Each of the first and second preamplifier sections comprises: output nodes N12 and N14 for outputting an output voltage to the main amplifier section; a plurality of load elements 111, 112, 121 and 122 which are serially connected between the output node and a power node VDD a first main electrode connected to the output node, a second main electrode connected to the selected memory cell or reference cell; and transistors 113 and 123 having a control electrode. The control electrode of the transistor is connected to connection nodes N11 and N13 of the plurality of the load elements.