METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor light-emitting element that enables easy peeling of a nitride semiconductor layer formed on a substrate for growth.SOLUTION: In a method of manufacturing a nitride semiconductor light-emitting element, a nitride semiconductor layer 11 is formed on a first substrate 31 having a first size d1. A first adhesive layer 12a having a second size d2 smaller than the first size d1 is formed on the nitride semiconductor layer 11, and a second adhesive layer 12b is formed on a second substrate 32. The first and second adhesive layers 12a and 12b are overlapped to adhere the first and second substrates 31 and 32 with each other. The first substrate 31 is removed so as to generate a recessed part 31a having a third size d3 larger than or equal to the second size d2. A medical fluid is injected into the recessed part 31a to etch the first substrate 31 until the nitride semiconductor layer 11 is exposed. The exposed nitride semiconductor layer 11 is further etched by the medical fluid to roughen an exposed surface of the nitride semiconductor layer 11.