SEMICONDUCTOR DEVICE, PACKAGING STRUCTURE AND MANUFACTURING METHOD OF PACKAGING STRUCTURE

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing failure occurrence.SOLUTION: The semiconductor device includes: an electrode 103; an Ag layer 201 formed in a part on the electrode 103; a Ni layer 202 formed on the electrode 103 around the Ag layer 201; a semiconductor element 102 disposed facing to the Ag layer 201; and a junction 304 containing Bi as a main component, which is joined with the Ag layer 201 and a rectangular junction surface of the semiconductor element 102. The Ag layer 201 is an area, which is formed at most at the outer side of the outer periphery of the junction surface 305 and has the outer periphery with four sides extended to the outer side thereof at most 0.3 times of the length, including the junction surface 305 of the semiconductor element 102.