GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light emitting element with high characteristics, in which a group III nitride semiconductor layer having physical property of excellent and uniform morphology grows on a GaN crystal substrate.SOLUTION: A present group III nitride semiconductor light emitting element comprises a GaN crystal substrate 100 and at least one layer of a group III nitride semiconductor layer 200 arranged on a principal surface 100m of the GaN crystal substrate 100. The GaN crystal substrate 100 includes a matrix crystal region 100s and a c-axis reversed crystal region 100t. As to an off angle between the principal surface 100m and {0001} plane 100c, when assuming that either one direction of a direction or a direction is a first direction and the other direction is a second direction, an absolute value |θ| of an off angle component in the first direction is 0.03° or more and 1.1° or less, and an absolute value |θ| of an off angle component in the second direction is 0.75×|θ| or less.