NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a nonvolatile memory device and a manufacturing method of the same, which can improve process yield and reliability by eliminating a level difference between a cell region and a peripheral circuit region of a semiconductor substrate to facilitate and simplify a process, and especially prevent contact not open, attack against a lower structure, and the like.SOLUTION: A nonvolatile memory device comprises: a semiconductor substrate including a peripheral circuit region and a cell region having a height lower than that of the peripheral circuit region; a control gate structure arranged on the cell region of the semiconductor substrate and in which a plurality of interlayer insulation films and a plurality of control gate electrodes are alternately laminated on top of another; a first insulation film covering the cell region on which the control gate structure is formed of the semiconductor substrate; a selection gate electrode on the first insulation film; and a peripheral circuit element on the peripheral circuit region of the semiconductor substrate.