METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR LAYER, AND PHOTOELECTRIC CONVERSION ELEMENT

PROBLEM TO BE SOLVED: To raise a power generation efficiency by forming a surface layer close to a stoichiometry composition and different from a composition of a photoelectric conversion semiconductor layer on a photoelectric conversion semiconductor layer surface.SOLUTION: A compound semiconductor surface layer is formed by performing: a first step of immersing a chalcopyrite-based compound semiconductor layer into a solution obtained by dissolving a compound containing a group-VIb element, and electrochemically depositing the compound containing the group-VIb element on a chalcopyrite-based compound semiconductor surface using the chalcopyrite-based compound semiconductor layer as a positive electrode and using a counter electrode as a negative electrode to form a layer containing the group-VIb element; a second step of immersing the layer formed at the first step and containing the group-VIb element into a solution obtained by dissolving at least any one of a compound containing group-Ib element and a compound containing a group-IIIb element, and electrochemically depositing at least any one of the group-Ib element and the group-IIIb element on the layer containing the group-VIb element using the layer containing the group-VIb element as a negative electrode and using a counter electrode as a positive electrode; and a third step of applying heat under an inert gas atmosphere in a temperature range of 200-400°C after the second step.