SEMICONDUCTOR STORAGE DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor storage device excellent in characteristics of a channel layer formed on lateral faces of laminates.SOLUTION: A semiconductor storage device according to the present invention comprises a first and a second selection lines arranged above laminates in...

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Bibliographische Detailangaben
Hauptverfasser:	KOBAYASHI TAKASHI, KINOSHITA KATSUJI, SASAKO YOSHITAKA, TAI MITSUHARU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor storage device excellent in characteristics of a channel layer formed on lateral faces of laminates.SOLUTION: A semiconductor storage device according to the present invention comprises a first and a second selection lines arranged above laminates in each of which semiconductor layers are laminated, and a gate insulation layer formed on lateral faces of the laminates and at a bottom between the laminates.