SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To obtain a semiconductor device which can inhibit breakage of an interlayer insulation film in thinning.SOLUTION: A semiconductor device comprises: a substrate 10 composed of a material having first rigidity; a drift layer 11 provided on a first principal surface 10a of the substrate 10; a gate electrode 70 formed on the drift layer 11 via an insulation film 60; and an interlayer insulation film 80 formed so as to cover the gate electrode 70 and composed of a material having second rigidity lower than the first rigidity. A total thickness of the substrate 10 and the drift layer 11 is not more than 200 μm. In the interlayer insulation film 80, a polygonal or elliptical or circular opening 90 with all interior angles being larger than 90° when viewed from above.