FILM GROWTH DEVICE AND LIGHT-EMITTING DIODE

PROBLEM TO BE SOLVED: To increase the number of substrates which are grown in a crystal film CVD device, especially in a crystal growth CVD device of a compound semiconductor having a great bandgap, such as GaN, which is grown from an organic metal material.SOLUTION: A plurality of susceptors includ...

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Bibliographische Detailangaben
Hauptverfasser:	NISHIHARA SHINJI, FURUMURA YUJI, MURA NAOMI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To increase the number of substrates which are grown in a crystal film CVD device, especially in a crystal growth CVD device of a compound semiconductor having a great bandgap, such as GaN, which is grown from an organic metal material.SOLUTION: A plurality of susceptors including an exhaust cylinder in the center are stacked on one another. A substrate is mounted on the susceptor. A CVD source gas is let to flow between the susceptors which have been heated. Thereby, gas consumption efficiency is improved, and the number of substrates which are grown at a time is increased in proportion to the number of the stacked susceptors.