SUBSTRATE, AND LIGHT EMITTING DIODE
PROBLEM TO BE SOLVED: To provide a substrate which simultaneously satisfies the formation of a seed crystal for crystal growth and the formation of random recesses in the interface of a substrate and a crystal layer, when a crystal for an LED (Light Emitting Diode) is grown on the substrate by CVD (...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a substrate which simultaneously satisfies the formation of a seed crystal for crystal growth and the formation of random recesses in the interface of a substrate and a crystal layer, when a crystal for an LED (Light Emitting Diode) is grown on the substrate by CVD (Chemical Vapor Deposition).SOLUTION: A crystal layer is grown by CVD on a substrate on which a crystal powder is stuck. The crystal powder serves as a seed crystal, and the seed crystal is grown and forms crystal grains. The grains are stably grown in such a manner that the number or density of crystal defects depends on the crystal powder. Consequently, it is possible to control the grain density of a grown layer of a crystal by stably sticking the powder with satisfactory reproducibility from an aqueous solution. Further, plasma etching is performed by using the powder as a mask to form random recesses, and then a GaN crystal layer 85 for LED is grown on a sapphire substrate 91 on which the random recesses are formed. |
---|