SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit leakage current in a gate insulation film to improve a function as a transistor in a transistor having a very short gate length due to microfabrication of a semiconductor integrated circuit.SOLUTION: A semiconductor device comprises a semiconductor substrate SUB having a principal surface, a pair of source/drain regions formed on the principal surface of the semiconductor substrate SUB, a gate insulation film AFE formed on a region sandwiched by the pair of source/drain regions so as to contact the principal surface, and a gate electrode PO formed so as to contact a top face of the gate insulation film AFE. A length of the gate electrode PO in a direction from one of the pair of source/drain regions to the other is less than 45 nm. The gate insulation film AFE has an antiferroelectric film.