THREE DIMENSIONAL NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a three dimensional nonvolatile memory element driven by an enhanced mode and a method of manufacturing the three dimensional nonvolatile memory element.SOLUTION: A three dimensional nonvolatile memory device includes: a pipe gate including a first pipe gate, a secon...

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Bibliographische Detailangaben
Hauptverfasser: LEE IN-HAE, BOKU HEISHU, OH SANG-HYEON, PARK SEON-MI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a three dimensional nonvolatile memory element driven by an enhanced mode and a method of manufacturing the three dimensional nonvolatile memory element.SOLUTION: A three dimensional nonvolatile memory device includes: a pipe gate including a first pipe gate, a second pipe gate formed on the first pipe gate, and a first interlayer insulating film interposed between the first pipe gate and the second pipe gate; a plurality of word lines alternately stacked with a plurality of second interlayer insulating films on the pipe gate; a pipe channel buried within the pipe gate; and a plurality of memory cell channels arranged to penetrate through the word lines and the second interlayer insulating films while being coupled to the pipe channel.