T-GATE FORMATION

PROBLEM TO BE SOLVED: To provide an improved method for forming a T-gate structure.SOLUTION: The method includes steps of: (a) providing a substrate; (b) disposing a planarizing layer on the substrate; (c) disposing a layer of a UV-sensitive first photoresist; (d) patterning the first photoresist by...

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Bibliographische Detailangaben
Hauptverfasser:	PELLENS RUDY, LINSKENS FRANK
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an improved method for forming a T-gate structure.SOLUTION: The method includes steps of: (a) providing a substrate; (b) disposing a planarizing layer on the substrate; (c) disposing a layer of a UV-sensitive first photoresist; (d) patterning the first photoresist by exposing to UV radiation through a mask and developing the photoresist to define a first opening for a base of a T-gate; (e) transferring the pattern to the planarizing layer; (f) rendering the pattern insensitive to UV radiation; (g) disposing a layer of a UV-sensitive second photoresist; (h) patterning the second photoresist by exposing to UV radiation through a mask and developing the photoresist to define a second opening for a cap of the T-gate over the first opening; and (i) depositing a conductive material within the first opening and the second opening to form a T-gate.