POLISHING APPARATUS AND POLISHING METHOD

PROBLEM TO BE SOLVED: To provide a polishing apparatus adequately controlling a polishing allowance of a wafer with a simple structure.SOLUTION: The polishing apparatus 1 is provided with: a polishing head 3 formed by integrating a packing pad 32 with a retainer ring 33; a retainer liquid pressure-measuring means 35 measuring the retainer liquid pressure Fr which the retainer ring 33 receives from slurry P on a polishing pad 23 during polishing of a wafer W; and a parameter setting means setting at least one parameter among head pressurizing force Fh applied to the polishing head 3 on the basis of the retainer liquid pressure Fr measured by the retainer liquid pressure measuring means 35, the rotation number of a surface plate 22 and polishing time per one batch. A polishing control means controls at least one of a rotation-driving means and a polishing head pressurizing means on the basis of the parameter set by the parameter setting means.