PLASMA CVD APPARATUS AND METHOD FOR FORMING AMORPHOUS FILM

PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus capable of forming a Si-based amorphous film with high compactness without necessity of increasing a temperature of a substrate and with excellent stability and to provide a method for forming the Si-based amorphous film.SOLUTION: The plasma CV...

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1. Verfasser:	TANGE MASAJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus capable of forming a Si-based amorphous film with high compactness without necessity of increasing a temperature of a substrate and with excellent stability and to provide a method for forming the Si-based amorphous film.SOLUTION: The plasma CVD apparatus 1004 applies a DC pulse voltage to electrode pairs 1012, 1016 stored in a chamber from an induced energy storage type pulse power supply 1028.