METHOD FOR ALIGNMENT BETWEEN MASK AND WORK

PROBLEM TO BE SOLVED: To prevent a position of a pattern formed on a work by projection exposure from being deviated from a position of a pattern formed by previous exposure processing and a position of a mask pattern for screen printing or the like to be executed in the next step, even in the case...

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Bibliographische Detailangaben
Hauptverfasser:	INOUE TOYOJI, MISHIO RYOICHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PRINTED CIRCUITS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent a position of a pattern formed on a work by projection exposure from being deviated from a position of a pattern formed by previous exposure processing and a position of a mask pattern for screen printing or the like to be executed in the next step, even in the case of the occurrence of telescopic deformation on the work.SOLUTION: During alignment in a projection exposure device, a scale factor by which a pattern of a mask M is enlarged or reduced is adjusted so as to minimize a value obtained by adding the sum total of amounts of deviation dM between positions of mask marks MAM1 to MAM4 of the mask and reference positions of mask marks SAM1 to SAM4 of a screen mask for use in the next step to the sum total of amounts of deviation dR between mask marks MAM1 to MAM4 of the mask and work marks WAM1 to WAM4, and the mask M or the work W is moved to align the mask M and the work W with each other.