GLASS-BASED SOI STRUCTURE

PROBLEM TO BE SOLVED: To provide an SOI structure in which a semiconductor wafer is stuck onto a support substrate made of an oxide glass or an oxide glass-ceramic.SOLUTION: In the SOI structure, an oxide glass or an oxide glass-ceramic is preferably transparent, has a strain point lower than 1,000°C and a specific resistance at 250°C of 10Ω-cm or less, and preferably contains a cation (for instance, alkali ion or alkali earth ion) which can move in the glass or the glass-ceramic in response to an electric field at high temperature (for instance, 300-1,000°C), a bonding strength between a semiconductor layer 15 and a support substrate 20 is preferably at least 8 J/m, the semiconductor layer 15 can have a hybrid region in which a semiconductor material reacts with an oxygen ion generated from the glass or the glass-ceramic, and the support substrate 20 preferably has a depleted region with a reduced concentration of a movable cation.