SEMICONDUCTOR STORAGE DEVICE

PROBLEM TO BE SOLVED: To provide an SOI DRAM.SOLUTION: A DRAM comprises: a MIS field effect transistor in which a plurality of layers of insulation films (2, 3, 4, 5) are selectively provided on a semiconductor substrate 1, semiconductor layers (8, 9, 10) are selectively provided to extend from on the insulation film 5 to on a region on which the insulation film 5 is not provided, an enclosing gate electrode 17 is selectively provided on the insulation film 4 around a whole periphery of a part 9 of the semiconductor layers via a gate insulation film 16, drain regions (14, 15) self-aligned with the gate electrode are provided on a part 10 of the semiconductor layers having a hole 7 immediately below, and source regions (12, 13) are provided on a part 8 of the semiconductor layers; and a trenched capacitor with a part contacting a lateral face of the source region 12, in which trenches are provided in the insulation films (3, 5), a charge storage electrode 19 is provided on a lateral face of the trench, and on a lateral face and an upper part of the charge storage electrode, a cell plate electrode 21 is provided via a capacitor insulation film 20.