HEATING APPARATUS

PROBLEM TO BE SOLVED: To provide a heating apparatus which can decrease occurrence of substrate warp even when a substrate is thinned a great deal to accelerate a temperature change.SOLUTION: A heating apparatus comprises: a base plate 2; and a faceplate arranged above the base plate 2, on which a w...

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Bibliographische Detailangaben
Hauptverfasser:	AKIBA HIRONAGA, KUBOTA KAZUHIKO, HATANAKA TSUTOMU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a heating apparatus which can decrease occurrence of substrate warp even when a substrate is thinned a great deal to accelerate a temperature change.SOLUTION: A heating apparatus comprises: a base plate 2; and a faceplate arranged above the base plate 2, on which a wafer is placed. The faceplate comprises: an aluminum substrate; and a film heater provided on the aluminum substrate for heating the wafer. At an outer periphery of the film heater, terminals 33 for power feeding connected to a terminal block 9 are provided. The terminal 33 is formed in a channel shape having bent parts 33A and 33B provided along a longer direction of the terminal block. The terminal block 9 is attached to an undersurface of the base plate 2.