PLASMA CVD DEVICE AND METHOD OF MANUFACTURING SILICON-BASED THIN FILM

PROBLEM TO BE SOLVED: To provide a plasma CVD device and a method of manufacturing a silicon-based thin film capable of obtaining a high-quality amorphous silicon thin film with less defects without contamination of higher order silane.SOLUTION: In a parallel plate type plasma CVD device 1, a recessed part 7 is provided to a discharge electrode 3, an earth cover 8 is provided between the discharge electrode and a ground electrode 10, and a through-hole 9 is provided to the earth cover so as to be opposed to the recessed part provided to the discharge electrode. When a thin film is manufactured, in the device described above, a vacuum container is held under reduced pressure. A material gas containing at least silicon is supplied into the recessed part from a wall surface of the recessed part provided to the discharge electrode in the vacuum container. A high-frequency power is applied to the discharge electrode. The material gas is turned into plasma in the recessed part. The plasma is localized in the recessed part. SiH3 radical contained in the material gas turned into plasma is made reach on the substrate, and film formation is performed. Thereby, the subject can be resolved.