SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing gate-source capacity of a trench structure, and a method of manufacturing the same.SOLUTION: The semiconductor device includes a first conductivity type semiconductor layer, a first main electrode which is provided on a first main surface side of the semiconductor layer, a second main electrode which is provided on a second main surface side of the semiconductor layer, two first control electrodes which are provided in a trench formed from the first main surface side of the semiconductor layer toward the second main surface, and control a current flowing between the first main electrode and second main electrode, and a second control electrode which is provided between the two first control electrodes and a second main surface-side bottom surface in the trench. The two first control electrodes are provided apart from each other in a direction parallel with the first main surface, and respectively faces an inner surface of the trench with a first insulating film interposed, and the second control electrode faces the inner surface of the trench with a second insulating film interposed.