PATTERN FORMATION METHOD

PROBLEM TO BE SOLVED: To provide a pattern formation method with a high throughput.SOLUTION: According a pattern formation method in an embodiment, a processed film is formed on a first substrate, and a self-organization material is selectively applied on a first region of the processed film. The se...

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Bibliographische Detailangaben
Hauptverfasser:	KOBAYASHI KATSUTOSHI, KAWAMURA YOSHIHISA, KIYONO YURIKO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a pattern formation method with a high throughput.SOLUTION: According a pattern formation method in an embodiment, a processed film is formed on a first substrate, and a self-organization material is selectively applied on a first region of the processed film. The self-organization material is phase-separated into plural components by baking, and any of the plural phase-separated components is removed to form a first pattern. Curable resin is applied on a second region of the processed film, and a second substrate having irregularities according to a desired pattern is brought into tight and close contact with and opposed to the curable resin, so as to harden the curable resin. By separating the second substrate from the curable resin, a second pattern on the curable resin is formed to process the processed film with the first and second patterns as masks.