SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device that allows improvement of a signal propagation speed through wiring portions and to provide a method of manufacturing the same.SOLUTION: A semiconductor device comprises: a first insulating film that is formed above a semiconductor substrate;...

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1. Verfasser: MINO AKIRA
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor device that allows improvement of a signal propagation speed through wiring portions and to provide a method of manufacturing the same.SOLUTION: A semiconductor device comprises: a first insulating film that is formed above a semiconductor substrate; a second insulating film that is formed on the first insulating film and has a higher relative dielectric constant than the first insulating film; a plurality of vertically columnar plugs in which the side surfaces adjacent to the second insulating film have a forward tapered shape and are formed so as to penetrate through the first insulating film and the second insulating film; a third insulating film that is formed on the second insulating film and has a lower relative dielectric constant than the second insulating film; a plurality of grooves formed in the third insulating film so as to reach the upper portions of the plurality of vertically columnar plugs; and a plurality of wiring portions that are formed in each of the plurality of grooves, in which parts thereof contact the upper portions of the plurality of vertically columnar plugs, and are composed of a metal.